NP100P06PDG-E2-AY Hoja de datos - Renesas Electronics
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NP100P06PDG-E2-AY
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Renesas Electronics
DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = ±100 A
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