NP109N04PUJ Hoja de datos - Renesas Electronics
Número de pieza
NP109N04PUJ
componentes Descripción
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PDF
page
10 Pages
File Size
288.2 kB
Fabricante
Renesas Electronics
DESCRIPTION
The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A)
• Low input capacitance
Ciss = 6900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
Número de pieza
componentes Descripción
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