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NR6300EZ-AZ Hoja de datos - California Eastern Laboratories.

NR6300EZ image

Número de pieza
NR6300EZ-AZ

Other PDF
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page
7 Pages

File Size
231.5 kB

Fabricante
CEL
California Eastern Laboratories. CEL

DESCRIPTION
The NR6300EZ is an InGaAs avalanche photo diode, and can be used in OTDR systems.


FEATURES
• Small dark current ID = 5 nA
• Small terminal capacitance Ct = 0.35 pF @ 0.9 V(BR)R
• High sensitivity S = 0.94 A/W @ λ = 1 310 nm, M = 1
• High speed response fC = 2.5 GHz MIN. @ λ = 1 310 nm, M = 10
• Detecting area size ø 30 μm


Número de pieza
componentes Descripción
PDF
Fabricante
ø 80 μm InGaAs AVALANCHE PHOTO DIODE FOR OTDR APPLICATIONS
Ver
California Eastern Laboratories.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Ver
California Eastern Laboratories.
φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Ver
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φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS
Ver
Renesas Electronics
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Ver
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φ 30 μm InGaAs AVALANCHE PHOTO DIO 14-PIN DIP MODULE WITH TEC
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Renesas Electronics
MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES
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MITSUBISHI ELECTRIC
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
Ver
NEC => Renesas Technology

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