High Current Bias Resistor Transistor
PNP Silicon

FEATUREs
• Collector −Emitter Sustaining Voltage −
   VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain −
   hFE = 125 (Min) @ IC = 0.8 Adc
           = 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
   VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
                   = 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• ESD Rating − Human Body Model: Class 1B
                      − Machine Model: Class B
• AEC−Q101 Qualified and PPAP Capable
• NSV Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant*