High Current Bias Resistor Transistor
PNP Silicon
FEATUREs
• Collector −Emitter Sustaining Voltage −
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain −
hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
• SOT−223 Surface Mount Packaging
• ESD Rating − Human Body Model: Class 1B
− Machine Model: Class B
• Pb−Free Package is Available