Description:
The NTE573 is an axial lead metal–to–silicon power diode using the Schottky Barrier principle. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. This device is ideally suited for use in low–voltage, high–frequency inverters, as free wheeling diodes, and polarity protection diodes.

FEATUREs:
● Low Forward Voltage
● Low Power Loss
● High Surge Capacity
● Low Stored Charge Majority Carrier Conduction
● High Efficiency
● High Switching Capability