Description:
Each OPB820, OPB820S10, OPB820S5, and OPB820S3 each consists of an infrared emitting diode and an NPN silicon phototransistor mounted in a low cost black plastic housing on opposite sides of an 0.080” (2.03 mm) wide slot.

FEATUREs:
• Non-contact switching
• Three standard aperture sizes for high resolution
• Low profile
• 0.080” (2.03 mm) wide gap
• 0.250” (6.96 mm) lead spacing