CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM

The P10C68 and P11C68 are fast static RAMs (35 and 45 ns) with a non-volatile electically-erasable PROM (EEPROM) cell incorporating in each static memory cell. The SRAM can be read and written an unlimited number of times while independent non-volatile data resides in PROM.
On the P10C68 data may easily be transferred from the SRAM to the EEPROM (STORE) and from the EEPROM back to the SRAM ( RECALL) using the NE (bar) pin. The Store and Recall cycles are initiated through software sequences on the P11C68. These devices combine the high performance and ease of use of a fast SRAM with the data integrity of non-volatility.
The P10C68 and P11C68 feature the industry standard pinout for non-volatile RAMs in a 28-pin 0.3-inch plastic and ceramic dual-in-line packages.

FEATURES
■ Non-Volatile Data Integrity
■ 10 year Data Retention in EEPROM
■ 35ns and 45ns Address and Chip Enable Access Times
■ 20ns and 25ns Output Enable Access
■ Unlimited Read and Write to SRAM
■ Unlimited Recall Cycles from EEPROM
■ 104 Store Cycles to EEPROM
■ Automatic Recall on Power up
■ Automatic Store Timing
■ Hardware Store Protection
■ Single 5V ± 10% Operation
■ Available in Standard Package 28-pin 0.3-inch DIL
   plastic and ceramic
■ Commercial and Industrial temperature ranges