Fabricante
STMicroelectronics
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General Features
■ TYPICAL RDS(on) = 0.25 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
CHARGE
■ LOW GATE INPUT RESISTANCE
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL 600V 0.140Ω-20A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
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N-CHANNEL 600V - 0.48Ω - 13A - TO-220/FP - D²/I²PAK - TO-247
Zener-Protected SuperMESH™ MOSFET
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N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronics
N-CHANNEL 600V - 0.45Ω - 13.5A TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
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