P4KE220AHE3 Hoja de datos - New Jersey Semiconductor
Número de pieza
P4KE220AHE3
componentes Descripción
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PDF
page
3 Pages
File Size
123.9 kB
Fabricante
New Jersey Semiconductor
FEATURES
• Glass passivated chip junction
• Available inuni-directional andbi-directional
• 400 W peak pulse power capability with a 10/1000 us waveform, repetitive rate (duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Lowincremental surge resistance
• Solder dip 275 °C max. 10s, per JESD 22-B106
• AEC-Q101 qualified
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