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PA1809 Hoja de datos - Renesas Electronics

PA1809 image

Número de pieza
PA1809

Other PDF
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page
8 Pages

File Size
172.2 kB

Fabricante
Renesas
Renesas Electronics Renesas

DESCRIPTION
The µPA1809 is a switching device which can be driven directly by a 4.0 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC Converters and power management of notebook computers and so on.


FEATURES
• 4.0 V drive available
• Low on-state resistance
   RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
   RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
   RDS(on)3 = 32 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD


Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Ver
NEC => Renesas Technology

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