Fabricante
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Philips Electronics
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General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS302PZ.
FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
APPLICATIONs
■ DC-to-DC conversion
■ MOSFET gate driving
■ Motor control
■ Charging circuits
■ Power switches (e.g. motors, fans)
Número de pieza
componentes Descripción
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Fabricante
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