General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS306PZ.

FEATUREs
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

APPLICATIONs
■ High-voltage DC-to-DC conversion
■ High-voltage MOSFET gate driving
■ High-voltage motor control
■ High-voltage power switches (e.g. motors, fans)
■ Automotive applications