General description
NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS5420D.

FEATUREs
■ Very low collector-emitter saturation resistance
■ Ultra low collector-emitter saturation voltage
■ 4 A continuous collector current
■ Up to 15 A peak current
■ High efficiency due to less heat generation

APPLICATIONs
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter