Número de pieza
PBSS5580PA
Fabricante
![NXP](/logo/NXP.png)
NXP Semiconductors.
![NXP](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.
NPN complement: PBSS4580PA.
FEATUREs and benefits
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
■ Exposed heat sink for excellent thermal and electrical conductivity
■ Leadless small SMD plastic package with medium power capability
APPLICATIONs
■ Loadswitch
■ Battery-driven devices
■ Power management
■ Charging circuits
■ Power switches (e.g. motors, fans)
Número de pieza
componentes Descripción
PDF
Fabricante
80 V, 4 A PNP low VCEsat (BISS) transistor
Philips Electronics
80 V, 4 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
80 V, 4 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
80 V, 4 A PNP low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
80 V, 4 A NPN low VCEsat (BISS) transistor
NXP Semiconductors.
80 V, 4 A NPN low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
80 V, 4 A NPN low VCEsat (BISS) transistor
Philips Electronics
80 V, 4.5 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.
80 V, 4.5 A PNP low VCEsat (BISS) transist
Philips Electronics
40 V, 4 A PNP low VCEsat (BISS) transistor
NXP Semiconductors.