General Description
   The M29EW is an asynchronous, uniform block, parallel NOR Flash memory device manufactured on 65nm multilevel cell (MLC) technology. READ, ERASE, and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode.

FEATUREs
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
   – VCC = 2.7–3.6V (program, erase, read)
   – VCCQ = 1.65–3.6V (I/O buffers)
• Asynchronous random/page read
   – Page size: 16 words or 32 bytes
   – Page access: 25ns
   – Random access: 100ns (Fortified BGA);
      110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
   – 0.88µs per byte (1.14 MB/s) TYP when using full
      512-word buffer size in buffer program
• Memory organization
   – Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
   – Embedded byte/word program algorithms
• Program/erase suspend and resume capability
   – Read from any block during a PROGRAM SUSPEND operation
   – Read or program another block during an ERASE
      SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to
   buffer capability
   – Fast buffered/batch programming
   – Fast block/chip erase
• VPP/WP# pin protection
   – Protects first or last block regardless of block
      protection settings
• Software protection
   – Volatile protection
   – Nonvolatile protection
   – Password protection
   – Password access
• Extended memory block
   – 128-word (256-byte) block for permanent, secure
      identification
   – Programmed or locked at the factory or by the
      customer
• Low power consumption: Standby mode
• JESD47H-compliant
   – 100,000 minimum ERASE cycles per block
   – Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Fortified BGA and TSOP packages
• Green packages available
   – RoHS-compliant
   – Halogen-free
• Operating temperature
   – Ambient: –40°C to +85°C