GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.
The PHN203 is supplied in the SOT96-1 (SO8) surface mounting package.

FEATURES
• Dual device
• Low threshold voltage
• Fast switching
• Logic level compatible
• Surface mount package