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PJM2301PSA-S

componentes Descripción

P- Enhancement Mode Field Effect Transistor

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page

7 Pages

File Size

1.3 MB

Fabricante

ETC

ETC

[Dongguan Pingjingsemi Technology Co., Ltd,]

FEATUREs
⚫ VDS= -20V ID= -2A
⚫ RDS(ON) =120mΩ (typ) @ VGS=-2.5V
RDS(ON) =88mΩ (typ) @ VGS=-4.5V
⚫ High power and current handing capability
⚫ Halogen and Antimony Free
⚫ Surface mount package

APPLICATIONs
⚫ Battery protection
⚫ Load switch
⚫ Power management

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componentes Descripción

PDF

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P- Enhancement Mode Field Effect Transistor

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P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Samhop Mircroelectronics

P-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology

P-Channel Enhancement Mode Field Effect Transistor

ACE Technology Co., LTD.

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