DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with base connected to flange.

FEATURES
• Diffused emitter ballasting resistors improve excellent current sharing and withstanding a high VSWR
• Interdigitated common-base structure provides high emitter efficiency
• Gold metallization with barrier realizes very stable characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance
• Internal input and output prematching networks allow an easier design of circuits.

APPLICATIONS
    Intended for use in common-base class C power amplifiers at 1.6 GHz.