datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Nexperia B.V. All rights reserved  >>> PSMN003-30P PDF

PSMN003-30P Hoja de datos - Nexperia B.V. All rights reserved

PSMN003-30P image

Número de pieza
PSMN003-30P

Other PDF
  no available.

PDF
DOWNLOAD     

page
15 Pages

File Size
341.3 kB

Fabricante
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
SiliconMAX intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics


APPLICATIONs
■ High frequency computer motherboard
   DC-to-DC convertors
■ OR-ing applications


Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS intermediate level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Ver
Philips Electronics
N-channel TrenchMOS intermediate level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS intermediate level FET
Ver
Philips Electronics
N-channel TrenchMOS intermediate level FET
Ver
Philips Electronics
N-channel TrenchMOS intermediate level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS intermediate level FET
Ver
Nexperia B.V. All rights reserved

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]