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PSMN165-200K Hoja de datos - Nexperia B.V. All rights reserved

PSMN165-200K image

Número de pieza
PSMN165-200K

Other PDF
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page
12 Pages

File Size
808.5 kB

Fabricante
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA

General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.


FEATUREs and benefits
■ Low conduction losses due to low
   on-state resistance
■ Suitable for high frequency
   applications due to fast switching
   characteristics


APPLICATIONs
■ Computer motherboards
■ DC-to-DC convertors
■ Switched-mode power supplies


Número de pieza
componentes Descripción
PDF
Fabricante
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
Nexperia B.V. All rights reserved
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.
N-channel TrenchMOS SiliconMAX standard level FET
Ver
NXP Semiconductors.

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