DESCRIPTION
RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

FEATURES
• High power gain:
   Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz
• High Efficiency: 55%typ.

APPLICATION
   For output stage of high power amplifiers in UHF
   band mobile radio sets.