This Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching convertors, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits.

FEATUREs
• 3.5A, 30V
• rDS(ON) = 0.060Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”