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RF2155PCBA Hoja de datos - RF Micro Devices

RF2155 image

Número de pieza
RF2155PCBA

componentes Descripción

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page
8 Pages

File Size
89.6 kB

Fabricante
RFMD
RF Micro Devices RFMD

Product Description
The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps.


FEATUREs
• Single 3V Supply
• 500mW CW Output Power
• 31dB Small Signal Gain
• Up to 60% Efficiency
• Digitally Controlled Output Power
• 430MHz to 930MHz Frequency Range

Typical Applications
• Analog Communication Systems
• 900MHz Spread Spectrum Systems
• 400MHz Industrial Radios
• Driver Stage for Higher Power Applications
• 3V Applications

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Número de pieza
componentes Descripción
PDF
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