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RF2337PCBA Hoja de datos - RF Micro Devices

RF2337 image

Número de pieza
RF2337PCBA

componentes Descripción

Other PDF
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page
4 Pages

File Size
38.8 kB

Fabricante
RFMD
RF Micro Devices RFMD

Product Description
The RF2337 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000MHz.


FEATUREs
• DC to 6000MHz Operation
• Internally matched Input and Output
• 15dB Small Signal Gain
• +25dBm Output IP3
• +12dBm Output Power
• Single Positive Power Supply

Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
• Final PA for Low Power Applications
• Broadband Test Equipment

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