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RF5176 Hoja de datos - RF Micro Devices

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Número de pieza
RF5176

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page
6 Pages

File Size
166.1 kB

Fabricante
RFMD
RF Micro Devices RFMD

Product Description
The RF5176 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Hetero junction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 3V CDMA-2000 and W-CDMA handsets as well as other applications in the 1850MHz to 2000MHz band. The device is self-contained, and the output can be easily matched to obtain optimum power, efficiency, and linearity characteristics over all recommended supply voltages. The device has a continuously variable bias circuit to allow idle current to be optimized for a given output power.


FEATUREs
• Single 3V Supply
• 27dBm Linear Output Power
• 26dB Linear Gain
• 40% Linear Efficiency
• On-board Power Down Mode

Typical Applications
• 3V 1850-1910MHz CDMA-2000 Handsets
• 3V 1920-1980MHz W-CDMA Handsets
• Spread-Spectrum Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment

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