Description
The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.4 to 1 GHz.

FEATUREs
• High efficiency and linear gain operations
• Integrated ESD protection
• Internally matched for ease of use
• Large positive and negative gate-source voltage range for improved class C operation
• Excellent thermal stability, low HCI drift
• In compliance with the European Directive 2002/95/EC

APPLICATIONs
• Wideband lab amplifier from 0.4 to 1 GHz
• Digital UHF TV 470-860 MHz
• 650 MHz particle accelerator
• 915 MHz RF energy applications