Fabricante
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Intersil
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The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
FEATUREs
• 16A, 50V
• rDS(ON) = 0.047Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
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Fabricante
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs ( Rev : 2002 )
Fairchild Semiconductor
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Fairchild Semiconductor
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Fairchild Semiconductor
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
Intersil
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET
Intersil
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
Intersil
25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor
25A, 50V, 0.047 Ohm, N-Channel Power MOSFET
New Jersey Semiconductor