[GESS]

N-Channel Enhancement-Mode Power Field-Effect Transistors

The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. Thesetypes can be operated directly from Integrated circuits.
The RFH-types are supplied in the JEDEC TO-218AC plastic package.

FEATUREs:
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device
■ High-current, low-inductance package