Fabricante
Intersil
Description
These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA9400.
FEATUREs
• 1A, -80V and -100V
• rDS(ON) = 3.65Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
Número de pieza
componentes Descripción
PDF
Fabricante
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
New Jersey Semiconductor
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-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
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12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
Intersil
-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS
Harris Semiconductor
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
Intersil
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
Intersil
1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
New Jersey Semiconductor