Fabricante
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Intersil
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA09378.
FEATUREs
• 2A, 50V and 60V
• rDS(ON) = 0.95Ω
• SOA is Power-Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
Número de pieza
componentes Descripción
PDF
Fabricante
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2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
Intersil
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Intersil
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14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs
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12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs
Fairchild Semiconductor