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RFM03U3CT

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Toshiba Toshiba

VHF- and UHF-band Amplifier Applications

(Note) The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.

• Output power: PO = 3 W (typ.)
• Gain: GP = 15 dB (typ.)
• Drain efficiency: ηD = 60% (typ.)


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componentes Descripción
PDF
Fabricante
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Ver
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Ver
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Ver
Toshiba

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