RFM10N15 Hoja de datos - GE Solid State
Número de pieza
RFM10N15
componentes Descripción
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4 Pages
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212.1 kB
Fabricante
GE Solid State
N-Channel Enhancement-Mode Power Field-Effect Transistors
FEATUREs
■ SOA is power-dissipation limited
■ Nanosecond switching speeds
■ Linear transfer characteristics
■ High input impedance
■ Majority carrier device
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componentes Descripción
PDF
Fabricante
N-Channel Enhancement-Mode Power MOS Field-Effect Transistors ( Rev : V2 )
New Jersey Semiconductor
N-Channel logic enhancement mode power field effect transistors
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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