Features
• Voltage resonance circuit use
• Reverse conducting IGBT with monolithic body diode
• High efficiency device for induction heating
• Low collector to emitter saturation voltage
   VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating