Features
● Trench gate and thin wafer technology (G6H-II series)
● High speed switching: tr =80 ns typ., tf = 150 ns typ.
● Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.
● Low leak current: ICES = 1 μA max.
● Built-in Fast Recovery Diode: VF = 1.4 V typ., trr = 23 ns typ.
● Isolated package: TO-220FL