Features
● Short circuit withstand time (5 s typ.)
● Low collector to emitter saturation voltage
          VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)
● Built in fast recovery diode (70 ns typ.) in one package
● Trench gate and thin wafer technology
● High speed switching
           tf = 75 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 10 A, Rg = 5 , inductive load)

APPLICATION: Inverter