Features
Low collector to emitter saturation voltage
  VCE(sat)= 1.35 V typ. (at IC= 45 A, VGE= 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf= 95 ns typ. (at IC= 30 A, Resistive Load, VCC= 300 V, VGE= 15 V, Rg = 5Ω , Ta = 25°C)