Description
The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for increased power added efficiency and linearity.The device uses Raytheon’s Pseudomorphic High Electron Mobility Transistor (pHEMT) process.

FEATUREs
◆ Positive supply voltage of 3.5V, nominal
◆ Power Added Efficiency of 56%, typical, at power out of 31.5 dBm
◆ Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm
◆ Small outline metal based quad plastic package