Fabricante
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Fairchild Semiconductor
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General Description
The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process.
FEATUREs
■ Single positive-supply operation with low power and shutdown modes
■ 39% CDMA/WCDMA efficiency at +28 dBm average output power
■ 52% AMPS mode efficiency at +31 dBm output power
■ Lead-free RoHS compliant 3 x 3 x 1mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/output
■ Meets CDMA2000-1XRTT/WCDMA performance requirements
■ Meets HSDPA performance requirements
■ Alternative pin-out to Fairchild RMPA0965 Device
Número de pieza
componentes Descripción
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