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Número de pieza
RMPA2458

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9 Pages

File Size
942 kB

Fabricante
Fairchild
Fairchild Semiconductor Fairchild

General Description
The RMPA2458 power amplifier is designed for high performance WLAN applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. The on chip detector provides power sensing capability while the bias control provides power saving shutdown capability. The PA’s industry leading low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.


FEATUREs
■ 31.5dB small signal gain
■ 27dBm output power @ 1dB compression
■ 103mA total current at 19dBm modulated power out
■ 2.5% EVM at 19 dBm modulated power out
■ 3.3V collector supply operation
■ 2.9V mirror supply operation
■ Power saving shutdown options (bias control)
■ Integrated power detector with 20dB dynamic range
■ Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package
■ Internally matched to 50 Ohms and DC blocked RF input/output
■ Optimized for use in 802.11b/g applications

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Número de pieza
componentes Descripción
PDF
Fabricante
2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier
Ver
Fairchild Semiconductor
2.4–2.5 GHz InGaP HBT Linear Power Amplifier
Ver
Fairchild Semiconductor
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2003 )
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation
InGaP HBT 2.3 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Ver
Microsemi Corporation

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