RT3A66M Hoja de datos - Isahaya Electronics
Número de pieza
RT3A66M
componentes Descripción
Other PDF
no available.
PDF
page
5 Pages
File Size
144.6 kB
Fabricante
Isahaya Electronics
DESCRIPTION
RT3A66M is a sillicon PNP epitaxial type dual transistor. It is designed for differential amplify application.
FEATURE
● High Vceo Vceo=-150V
● Good two elements characteristics
hFE1/hFE2=1.0 typ
｜ VBE1-VBE2｜ =2mV typ
APPLICATION
For differential amplify application.
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