Description
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45%, and powers 7W over the frequency range from 2300MHz to 2400MHz. Integrated with Asymmetrical Doherty configurations, RTH Series is packaged in a very small form-factor 28 x 19 x 4.8mm on AIN (aluminum nitride) board which provides excellent thermal dissipation.

Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• Asymmetric Doherty Amplifier
• High Efficiency
• No Matching circuit needed

APPLICATIONs
• RF Sub-Systems
• Base Station
• RRH
• 4G/ LTE system
• Small cell