[Spansion Inc.]

General Description
The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics
Architectural Advantages
◾ Single power supply operation
◾ Manufactured on 110 nm MirrorBit process technology
◾ Secured Silicon Sector region
   – 128-word/256-byte sector for permanent, secure identification
      through an 8-word/16-byte random Electronic Serial Number,
      accessible through a command sequence
   – Programmed and locked at the factory or by the customer
◾ Flexible sector architecture
   – 64Mb (uniform sector models): One hundred twenty-eight 32 Kword
      (64 KB) sectors
   – 64 Mb (boot sector models): One hundred twenty-seven 32 Kword
      (64 KB) sectors + eight 4Kword (8KB) boot sectors
   – 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors
   – 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors +
      eight 4Kword (8KB) boot sectors
◾ Enhanced VersatileI/O™ Control
   – All input levels (address, control, and DQ input levels) and outputs
      are determined by voltage on VIO input. VIO range is 1.65 to VCC
◾ Compatibility with JEDEC standards
   – Provides pinout and software compatibility for single-power supply
   flash, and superior inadvertent write protection
◾ 100,000 erase cycles typical per sector
◾ 20-year data retention typical

Performance Characteristics
◾ High performance
   – 90 ns access time
   – 8-word/16-byte page read buffer
   – 25 ns page read time
   – 16-word/32-byte write buffer which reduces overall programming
      time for multiple-word updates
◾ Low power consumption
   – 25 mA typical initial read current,
      1 mA typical page read current
   – 50 mA typical erase/program current
   – 1 µA typical standby mode current
◾ Package options
   – 48-pin TSOP
   – 56-pin TSOP
   – 64-ball Fortified BGA
   – 48-ball fine-pitch BGA