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S30C50CE Hoja de datos - Mospec Semiconductor

S30C30CE image

Número de pieza
S30C50CE

componentes Descripción

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2 Pages

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90.9 kB

Fabricante
Mospec
Mospec Semiconductor Mospec

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O

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Número de pieza
componentes Descripción
PDF
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Schottky Barrier Rectifiers ( Rev : V2 )
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Mospec Semiconductor
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Shenzhen Luguang Electronic Technology Co., Ltd
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Leshan Radio Company
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GOOD-ARK
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
Schottky Barrier Rectifiers
Ver
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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