S8204 Hoja de datos - Toshiba
Número de pieza
S8204
componentes Descripción
PDF
page
7 Pages
File Size
188.9 kB
Fabricante
Toshiba
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2001 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2003 )
Toshiba
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