SB051C015-1-W-AG Hoja de datos - Transys Electronics Limited
Número de pieza
SB051C015-1-W-AG
componentes Descripción
Other PDF
no available.
PDF
page
1 Pages
File Size
151.4 kB
Fabricante
Transys Electronics Limited
Features
Oxide Passivated Junction
Very Low Forward Voltage
125 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Chromium Barrier
>1000V ESD (MM)
Número de pieza
componentes Descripción
PDF
Fabricante
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF.
Transys Electronics Limited
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 2 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF.
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. ( Rev : V2 )
Transys Electronics Limited
Schottky cr Barrier Diode Wafer 65 Mils, 15 Volt, 3 Amp, 0.35VF.
Transys Electronics Limited
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