SB090P150-W-AL Hoja de datos - Transys Electronics Limited
Número de pieza
SB090P150-W-AL
componentes Descripción
Other PDF
no available.
PDF
page
1 Pages
File Size
151.6 kB
Fabricante
Transys Electronics Limited
Features
Oxide Passivated Junction
Low Forward Voltage
150 º C Junction Operating
Low Reverse Leakage
Supplied as Wafers
Platinum Barrier
Número de pieza
componentes Descripción
PDF
Fabricante
Schottky Barrier Diode Wafer 90 Mils, 200 Volt, 8 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 90 Mils, 125 Volt, 8 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 51 Mils, 150 Volt, 2 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 106x138 Mils, 150 Volt, 15 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 63 Mils, 150 Volt, 3 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 73 Mils, 125 Volt, 5 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp
Transys Electronics Limited
Schottky Barrier Diode Wafer 40 Mils, 200 Volt, 1 Amp
Transys Electronics Limited
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