This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.

FEATUREs
• Low On-Resistance
• Low Capacitance
• 1.8V drive
• ESD Diode-Protected Gate
• Pb-Free, Halogen Free and RoHS compliance
• Ultra small package SCH6 (1.6mm×1.6mm×0.56mmt)

Typical Applications
• Load Switch