Description
The SFH620AA/ SFH620AGB features a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm lead spacing.

FEATUREs
• High Current Transfer Ratios
• at 5 mA: 50-600 %
• at 1.0 mA: 45 % typical (> 13)
• Low CTR Degradation
• Good CTR Linearity Depending on Forward Current
• Isolation Test Voltage, 5300 VRMS
• High Collector-emitter Voltage, VCEO = 70 V
• Low Saturation Voltage
• Fast Switching Times
• Temperature Stable
• Low Coupling Capacitance
• End-stackable, .100‘(2.54 mm) Spacing
• High Common-mode Interference Immunity (Unconnected Base)
• SMD Option, See SFH620A/SFH6206 Data Sheet
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC