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SGA-9089Z image

Número de pieza
SGA-9089Z

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page
6 Pages

File Size
408.5 kB

Fabricante
RFMD
RF Micro Devices RFMD

Product Description
RFMD’s SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA-9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents depending on the power and linearity requirements.


FEATUREs
◾ 0.05GHz to 4GHz Operation
◾ 15.0dB GMAX at 2.44GHz
◾ P1dB=+23.8dBm at 2.44GHz
◾ OIP3=+37.5dBm at 2.44GHz
◾ 3.1dB NF at 2.44GHz
◾ Low Cost, High Performance,
   Versatility


APPLICATIONs
◾ Analog and Digital Wireless Systems
◾ 3G, Cellular, PCS, RFID
◾ Fixed Wireless, Pager Systems
◾ PA Stage for Medium Power Applications


Número de pieza
componentes Descripción
PDF
Fabricante
High IP3, Medium Power Discrete SiGe Transistor
Ver
Sirenza Microdevices => RFMD
High IP3, Medium Power Discrete SiGe Transistor
Ver
Sirenza Microdevices => RFMD
Medium Power Discrete SiGe Transistor
Ver
Sirenza Microdevices => RFMD
Medium Power Discrete SiGe Transistor
Ver
Sirenza Microdevices => RFMD
NPN SiGe RF Transistor for Medium Output Power Amplification
Ver
Renesas Electronics
NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
California Eastern Laboratories.
NPN SiGe HIGH FREQUENCY TRANSISTOR
Ver
NEC => Renesas Technology
NPN SiGe RF POWER TRANSISTOR
Ver
Tachyonics CO,. LTD
NPN SiGe RF POWER TRANSISTOR
Ver
Tachyonics CO,. LTD
NPN SiGe RF POWER TRANSISTOR
Ver
Tachyonics CO,. LTD

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